| abstract |
It is an object of the present invention to provide a composition for film formation which forms a base which can form a phase separation structure by self-organization well and can form a pattern with few residues and defects. The present invention relates to a first repeating unit containing a crosslinkable group, a second repeating unit which is a repeating unit different from the first repeating unit, and a third repeating unit which is different from the first repeating unit and has higher polarity than the second repeating unit. A film comprising: a polymer having a structural unit having a first group interacting with Si-OH, Si-H or Si-N at at least one end of the main chain, and a solvent It is a composition for formation. A self-contained block copolymer having a block containing the second repeating unit and a block containing the third repeating unit, which is formed on the upper surface side of a substrate having Si-OH, Si-H or Si-N in the surface layer It is preferable that it is used for formation of the base of an organization film. |