http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017188218-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J201-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-38 |
| filingDate | 2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2017188218-A1 |
| titleOfInvention | Manufacturing method of semiconductor chip with protective film and manufacturing method of semiconductor device |
| abstract | In the present invention, after the energy ray curable protective film forming film 13 is attached to the semiconductor wafer 18, the protective film forming film 13 is irradiated with energy rays to be cured, and then the semiconductor wafer 18 is diced. The present invention relates to a method for manufacturing a semiconductor chip 19 with a film. When the protective film forming film 13 is irradiated with energy rays to form the protective film 13 ', the tensile elastic modulus of the protective film 13' is 500 MPa or more. The present invention also relates to a method for manufacturing a semiconductor device, in which a semiconductor chip 19 with a protective film is picked up and the semiconductor chip 19 is connected to a substrate. |
| priorityDate | 2016-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 209.