http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017188177-A1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
filingDate | 2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2017188177-A1 |
titleOfInvention | Etching solution for semiconductor substrate |
abstract | The present invention is an alkaline etching solution for treating the surface of a semiconductor substrate for solar cells, including at least one hydroxystyrene polymer represented by the general formula (1), and an alkaline agent, An etching solution in which the total of monomers and oligomers represented by n of 1 to 8 in the hydroxystyrene polymer is 3.5% or less of the hydroxystyrene polymer. According to the present invention, it is possible to form a texture on a solar cell semiconductor substrate in a shorter time on a relatively low temperature side, and it is excellent in continuous productivity and product storage stability, and a surface with low light reflectance can be stably obtained. The effect is demonstrated. In addition, the pyramid-shaped irregularities with an average of 3 μm or less are stably formed, and the surface shape showing a light reflectance of 10% or less, which was not obtained by the prior art, is not influenced by lot fluctuation of the etching solution raw material. It can be stably applied to the semiconductor substrate. |
priorityDate | 2016-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 125.