Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0439 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78687 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2017-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-WO2017159810-A1 |
titleOfInvention |
Field effect transistor, display element, image display device, and system |
abstract |
A gate electrode for applying a gate voltage; a source electrode and a drain electrode for transmitting an electrical signal; an active layer formed between the source electrode and the drain electrode; and the gate electrode and the active layer And a gate insulating layer formed between the active layer, the active layer includes at least two types of oxide layers of an A layer and a B layer, and the active layer has the following conditions: A field-effect transistor satisfying at least one of (1) and (2). Condition (1): The active layer is composed of three or more oxide layers including two or more A layers. Condition (2) The band gap of the A layer is smaller than the band gap of the B layer, and the oxygen affinity of the A layer is greater than or equal to the oxygen affinity of the B layer. |
priorityDate |
2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |