http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017159702-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 |
| filingDate | 2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2017159702-A1 |
| titleOfInvention | Method for manufacturing field effect transistor |
| abstract | A method of manufacturing a field effect transistor having a front channel or a back channel in a region where a first oxide layer and a second oxide layer are adjacent to each other, wherein the first oxide layer is a precursor of the first oxide layer. A second precursor layer that is a precursor of the second oxide layer is formed so as to be in contact with the first precursor layer, and the first precursor layer and the second precursor layer are formed as the first precursor layer. An oxide layer forming step for converting the oxide layer into the second oxide layer, and the oxide layer forming step includes at least one of the following treatments (I) and (II): Method for producing effect transistor. (I) A first oxide precursor forming coating solution that can form a first oxide precursor and that contains a solvent is applied, and the solvent is removed to remove the first precursor layer. Forming process. (II) A second oxide precursor-forming coating solution which can form a second oxide precursor and contains a solvent is applied, and the solvent is removed to remove the second precursor layer. Forming process. |
| priorityDate | 2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 133.