http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017158845-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0353 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C12Q1-6869 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-48721 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00087 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2017158845-A1 |
| titleOfInvention | Membrane device manufacturing method, membrane device, and nanopore device |
| abstract | The manufacturing method of the membrane device includes a first step of forming an island pattern 100b having a pillar structure on a part of the Si substrate 100 by etching, a first insulating layer 101 formed on the Si substrate 100, and an island pattern. The second step of exposing the upper Si surface 100a of 100b, the third step of forming the SiN layer 102 on the island pattern 100b and the first insulating layer 101, and the SiN layer 102 for the Si substrate 100 Etching from the opposite side and etching the island pattern 100b using the first insulating layer 101 as a mask to form a membrane M that is a region of the SiN layer 102 where the island pattern 100b does not remain. And including. |
| priorityDate | 2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.