http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017043635-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D151-085 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate | 2016-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2017043635-A1 |
| titleOfInvention | Resist pattern coating composition containing vinyl group or (meth) acryloxy group-containing polysiloxane |
| abstract | PROBLEM TO BE SOLVED: To provide a coating composition for applying on a resist pattern by a solvent development lithography process to reverse the pattern. SOLUTION: A composition applied to a resist pattern comprising a polysiloxane obtained by hydrolytic condensation of a hydrolyzable silane and a carboxylic acid ester solvent or an ether solvent, wherein the hydrolyzable silane is a vinyl group or (meth). The composition comprising a hydrolyzable silane containing an acryloxy group. The hydrolyzable silane contains 20 to 100 mol% of the hydrolyzable silane containing a vinyl group or a (meth) acryloxy group in the total hydrolyzable silane. Step (1) for applying a resist on a substrate, step (2) for exposing and developing a resist film to form a resist pattern, step (3) for applying the composition to a resist pattern during or after development (3) ), A method of manufacturing a semiconductor device including a step (4) of removing the resist pattern by etching and inverting the pattern. [Selection] Figure 1 |
| priorityDate | 2015-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 684.