http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016171184-A1

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filingDate 2016-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2016171184-A1
titleOfInvention Gas barrier film, member for electronic device, and electronic device
abstract The present invention is a gas barrier film having a base film and a gas barrier layer obtained by modifying a layer containing a polysilazane compound formed on the base film, and having a water vapor transmission rate of 0.100 g / (M 2 · day) or less, and in an argon gas atmosphere at 60 ° C. and a relative humidity of 90%, the amount of hydrogen gas released from the gas barrier layer is 5.5 μg or less per 1 cm 2 of the gas barrier film. A gas barrier film, an electronic device member comprising the gas barrier film, and an electronic device comprising the electronic device member. According to the present invention, there are provided a gas barrier film having a gas barrier layer having excellent gas barrier properties and suppressing outgas generation, an electronic device member comprising the gas barrier film, and an electronic device including the electronic device member. The
priorityDate 2015-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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