| abstract |
A nitride semiconductor device (1) includes a substrate (100), an n-type drift layer (102) disposed on the surface of the substrate (100), and a p-type underlayer disposed on the drift layer (102). (104), a gate opening (110) formed in the base layer (104) and reaching the drift layer (102), and an n-type channel formation layer (112) covering the gate opening (110) and having a channel region ) And the gate electrode (118) disposed on the channel formation layer (112) in the gate opening (110), and the opening (120) spaced from the gate electrode (118) and reaching the base layer (104). An opening (122) formed on the bottom surface of the opening (120) and reaching the drift layer (102), a source electrode (124) covering the opening (120) and the opening (122), and a substrate (100) On the back of And a location drains electrode (126). |