http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016140246-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
filingDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2016140246-A1 |
titleOfInvention | Polishing liquid for CMP and polishing method using the same |
abstract | A polishing liquid for CMP for polishing a ruthenium-based metal, which contains abrasive grains, a metal oxidant, and water, and the metal oxidant has an oxidation-reduction potential accompanying the exchange of hydroxide ions. The oxidation-reduction potential is 0.68 V or more with respect to a standard hydrogen electrode, the pH of the polishing liquid for CMP is 7.0 to 13.0, and the content of the abrasive grains is the abrasive grains The polishing slurry for CMP, which is 0.10 parts by mass or more with respect to 100 parts by mass in total of the content of and the content of water. |
priorityDate | 2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 275.