| abstract |
A single crystal silicon carbide thin film 11 having a thickness of 1 μm or less, a handle substrate 12 made of a heat resistant material (excluding single crystal silicon carbide) having a heat resistance temperature of 1100 ° C. or higher supporting the single crystal silicon carbide thin film 11, At least one material selected from silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or Ti, Au, Ag provided between the crystalline silicon carbide thin film 11 and the handle substrate 12 There is provided a composite substrate comprising an intervening layer 13 having a thickness of 1 μm or less made of at least one metal material selected from Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. The composite substrate of the present invention can produce a nanocarbon film with few defects at low cost. |