http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015194552-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03 |
| filingDate | 2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2015194552-A1 |
| titleOfInvention | Silicon nitride powder, silicon nitride sintered body and circuit board, and method for producing silicon nitride powder |
| abstract | An object of the present invention is to provide a silicon nitride sintered body and a circuit board having high thermal conductivity and also high mechanical strength, a silicon nitride powder as a raw material thereof, and a method for producing the same. The specific surface area is 4.0-9.0 m2 / g, the proportion of β phase is less than 40%, the oxygen content is 0.20-0.95% by mass, and the volume-based particle size by laser diffraction scattering method. The frequency distribution curve obtained by distribution measurement has two peaks, and the peak tops of the peaks are in the range of 0.4 to 0.7 μm and in the range of 1.5 to 3.0 μm. The ratio of the frequency (frequency of peak top in the range of particle diameter 0.4 to 0.7 μm / frequency of peak top in the range of particle diameter 1.5 to 3.0 μm) is 0.5 to 1.5, The ratio D50 / D BET (μm / μm) of the median diameter D50 (μm) obtained by the particle size distribution measurement and the specific surface area equivalent diameter D BET (μm) calculated from the specific surface area is 3.5 or more. Silicon nitride powder, nitrogen obtained from this silicon nitride powder Sintered silicon and circuit board, as well as to provide a manufacturing method of the silicon nitride powder. |
| priorityDate | 2014-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.