| abstract |
A method for manufacturing a semiconductor device, comprising: obtaining a pattern 2a of a composition containing polysiloxane on a substrate 1; and forming an ion impurity region 6 on the substrate, wherein the ion impurity region is formed. After the step, the method further includes a step of baking the pattern at 300 to 1,500 ° C. This makes it possible to easily remove the cured film of the pattern 2a of the composition containing polysiloxane after the formation of the ionic impurity region on the semiconductor substrate without any residue. Tact time can be shortened. |