| abstract |
The present invention includes a step of forming a resist underlayer film on one surface side of a substrate, a step of forming a silicon-containing film on the surface of the resist underlayer film opposite to the substrate, and the resist underlayer film using a basic aqueous solution. And a pattern forming method including a step of removing at least a part of each of the silicon-containing films. After the silicon-containing film forming step and before the resist underlayer film and the silicon-containing film removing step, a step of forming a resist pattern on the surface of the silicon-containing film opposite to the substrate, and the resist pattern as a mask It is preferable to further include a step of etching the silicon-containing film. |