| abstract |
An object of the present invention is to provide a gas barrier film having high gas barrier properties and excellent bending resistance. The gas barrier film of the present invention is a gas barrier film having an inorganic layer [A] and a silicon compound layer [B] in this order from the polymer substrate side on at least one side of the polymer substrate. [B] is represented by at least SiN x H y , SiO p N q , SiO a (OH) 4-2a (x + y = 4, p + q = 4, a <2 x, y, p, q> 0) A gas barrier film comprising a silicon compound having a structure and in contact with an inorganic layer [A] and a silicon compound layer [B]. [Selection] Figure 1 |