| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02T10-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60L50-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M7-537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02P27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2013-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2015033463-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof, power conversion device, three-phase motor system, automobile, and railway vehicle |
| abstract |
In a semiconductor device having a silicon carbide device, there is provided a technique capable of suppressing a withstand voltage variation and realizing a reduction in area of a termination structure. In order to solve the above problems, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second provided at the outer peripheral side of the first region at the junction termination portion. A first concentration gradient is provided in the first region, and a second concentration gradient greater than the first concentration gradient is provided in the second region. |
| priorityDate |
2013-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |