http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2014109134-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-20 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L77-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L67-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-064 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L77-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L77-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L77-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L67-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-064 |
| filingDate | 2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2014109134-A1 |
| titleOfInvention | Hexagonal boron nitride and high thermal conductive resin molding using the same |
| abstract | High thermal conductivity is expressed by filling a resin with h-BN powder having an average primary particle size (D 50 ) of 20 μm or less and primary particles continuous in the plane direction and excellent in economic efficiency. An economical method for producing h-BN is to treat a boron-containing substance and a nitrogen-containing substance at less than 1550 ° C. in the first step to obtain crude boron nitride having a BN content of 80% by weight or more. In the second step, the crude boron nitride is charged into a heat-resistant container together with a boron-containing flux component, and reheated at 1550 to 2400 ° C. in a continuous reaction furnace in a nitrogen gas atmosphere to grow crystals. Continuous production method of hexagonal boron nitride powder. The heat-resistant container used in the second step is preferably made of graphite or boron nitride, and the continuous reaction furnace used in the second step is preferably a pusher type tunnel furnace. |
| priorityDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 129.