http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2014061627-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D7-61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 |
| filingDate | 2013-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2014061627-A1 |
| titleOfInvention | Gas barrier film and method for producing gas barrier film |
| abstract | The object of the present invention is to provide a gas barrier that has a sufficient gas barrier property even in a high-temperature and high-humidity environment, and that the deterioration of the gas barrier property is sufficiently suppressed even when the film is bent, and has excellent crack resistance. Is to provide a film. The gas barrier film of the present invention has a gas barrier layer containing silicon, oxygen, and carbon on at least one surface of a substrate, and satisfies all the following requirements (i) to (iv): And (I) In a region where the silicon, oxygen, and carbon atom ratio is 90% or more in the layer thickness direction, (carbon atom ratio) <(silicon atom ratio) <(oxygen atom ratio), (Ii) the carbon distribution curve has at least two extreme values; (Iii) The absolute value of the difference between the maximum value and the minimum value of the carbon atom ratio in the carbon distribution curve is 5 at% or more, (Iv) The maximum value of the oxygen distribution curve closest to the surface of the gas barrier layer on the substrate side takes the maximum value among the maximum values of the oxygen distribution curve in the gas barrier layer. |
| priorityDate | 2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 161.