http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013186970-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-15 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-07 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-00 |
filingDate | 2013-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2016-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2013186970-A1 |
titleOfInvention | Capacitor element and manufacturing method thereof |
abstract | In an aqueous solution containing nitric acid 0.05 to 0.5 mass% and having a liquid temperature of 30 ° C. or lower, a voltage was applied to the sintered tungsten powder at an initial current density of 9 to 300 mA / g for 3 to 11 hours, By forming the surface layer of the sintered body into a dielectric, an anode body containing tungsten and an amorphous tungsten oxide present on the surface of the anode body, the crystals are substantially observed with a scanning electron microscope. A capacitor element having at least a dielectric layer and low leakage current is obtained. |
priorityDate | 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.