http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013164940-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31705 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate | 2013-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2013164940-A1 |
| titleOfInvention | Method of implanting dopant into substrate to be processed and plasma doping apparatus |
| abstract | A method for implanting a dopant into a substrate to be processed is provided. In one embodiment, a method includes (a) preparing a substrate to be processed in a processing container; and (b) supplying a doping gas containing AsH 3 , an inert gas, and H 2 gas into the processing container. Applying plasma excitation energy into the processing container and injecting a dopant into the substrate to be processed. In the step of injecting the dopant, the ratio of the hydrogen partial pressure to the total gas pressure in the processing vessel is set to 0.0015 or more and 0.003 or less. |
| priorityDate | 2012-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.