http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013150984-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2013-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2013150984-A1 |
| titleOfInvention | Optical substrate, semiconductor light emitting device, and method of manufacturing semiconductor light emitting device |
| abstract | The optical substrate (1) has a concavo-convex structure (12) including a plurality of independent convex portions (131 to 134) and a concave portion (14) provided between the convex portions (131 to 134) on the surface. Is provided. The average interval Pave between adjacent convex portions (131 to 134) of the concavo-convex structure (12) satisfies 50 nm ≦ Pave ≦ 1500 nm and satisfies 0.6 h ≧ hn ≧ 0 h with respect to the average convex portion height Have. The convex part (133) having the convex part height hn exists with a probability Z satisfying 1/10000 ≦ Z ≦ 1/5. When the optical substrate (1) is used for a semiconductor light emitting device, dislocations in the semiconductor layer are dispersed and the dislocation density is reduced, thereby improving the internal quantum efficiency IQE and eliminating the waveguide mode by light scattering, thereby improving the light extraction efficiency. LEE is increased and the light emission efficiency of the semiconductor light emitting device is improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9614136-B2 |
| priorityDate | 2012-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.