http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013146713-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-723 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2982 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-5935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068 |
| filingDate | 2013-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2013146713-A1 |
| titleOfInvention | Method for producing silicon nitride powder, silicon nitride powder, silicon nitride sintered body, and circuit board using the same |
| abstract | An object of the present invention is to provide a silicon nitride sintered body having high mechanical strength and thermal conductivity and a circuit board using the same. When a specific surface area is RS (m 2 / g) and an oxygen content ratio is RO (mass%), an amorphous Si—N (—H) compound having an RS / RO of 500 or more is flowed in a continuous firing furnace. In the temperature range of 1000 to 1400 ° C., heating is performed at a rate of temperature increase of 12 to 100 ° C./min. In addition, the content ratio of oxygen existing from the particle surface to 3 nm immediately below the particle surface is FSO (mass%), the oxygen content ratio present from 3 nm directly below the particle surface to FIO (mass%), and the specific surface area is FS. (M 2 / g), FS / FSO is 8 to 25, FS / FIO is 22 or more, silicon nitride powder, and nitriding obtained by sintering the silicon nitride powder A silicon sintered body and a circuit board using the silicon nitride sintered body are provided. |
| priorityDate | 2012-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.