http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013047516-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L79-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L79-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-0672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D161-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2012-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2013047516-A1 |
| titleOfInvention | Diarylamine novolac resin |
| abstract | PROBLEM TO BE SOLVED: To provide a diarylamine novolak resin such as a novel phenylnaphthylamine novolak resin, and a resist underlayer film forming composition for use in a lithography process for manufacturing a semiconductor device using the resin. A polymer comprising a unit structure (A) represented by the following formula (1): ## STR1 ## (wherein Ar1 and Ar2 each represent a benzene ring or a naphthalene ring). A resist pattern is formed by forming a lower layer film on the semiconductor substrate with a resist underlayer film forming composition, forming a hard mask thereon, further forming a resist film thereon, irradiation with light or electron beam and development. A method of manufacturing a semiconductor device, comprising: a step of forming; a step of etching a hard mask with a resist pattern; a step of etching the lower layer film with a patterned hard mask; and a step of processing a semiconductor substrate with the patterned lower layer film . [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10556986-B2 |
| priorityDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 547.