| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-28 |
| filingDate |
2012-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2013008424-A1 |
| titleOfInvention |
Power semiconductor module |
| abstract |
When the Si semiconductor element and the wide band gap semiconductor element are arranged in the same power semiconductor module, the temperature rise of the wide band gap semiconductor element is suppressed to a low level, and the increase in the total chip area of the wide band gap semiconductor element is suppressed to a low level. A power semiconductor module that can be manufactured at low cost is obtained. The Si switching element (4) is disposed in the central region of the power semiconductor module (100), and the SiC diode element (5) is disposed on both sides of the central region of the power semiconductor module (100) or in the peripheral portion surrounding the central region. Be placed. |
| priorityDate |
2011-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |