http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2012117718-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2012-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2012117718-A1 |
| titleOfInvention | Thin film semiconductor device and manufacturing method thereof |
| abstract | A gate electrode (2) formed on the substrate (1), a gate insulating film (3) formed to cover the gate electrode (2), and a channel region formed on the gate insulating film (3) Semiconductor layer (4), channel protective layer (5) formed above semiconductor layer (4) and containing an organic material containing silicon, oxygen and carbon, semiconductor layer (4) and channel protective layer (5) The carbon as a main component is formed at the interface with the interface layer (6), which is carbon derived from the organic material of the channel protective layer (5), and the semiconductor layer (4) A source electrode (8s) and a drain electrode (8d) connected to each other. |
| priorityDate | 2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.