http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2012077640-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D139-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G14-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2011-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2012077640-A1 |
| titleOfInvention | Resist underlayer film forming composition containing hydroxyl group-containing carbazole novolak resin |
| abstract | PROBLEM TO BE SOLVED: To provide a resist underlayer film forming composition having heat resistance for use in a lithography process for manufacturing a semiconductor device. The following formula (1): [Chemical 1] A unit structure represented by the formula (2): [Chemical 2] A resist underlayer containing a polymer comprising a unit structure represented by formula (1) and a unit structure represented by formula (2) in a molar ratio of 3 to 97:97 to 3 Film-forming composition. It is patterned by a process of forming an underlayer film with a resist underlayer film forming composition on a semiconductor substrate, a process of forming a hard mask thereon, a process of forming a resist film thereon, light or electron beam irradiation and development. Forming a resist film, etching a hard mask in accordance with the patterned resist film, etching the underlying film in accordance with the patterned hard mask, and processing the semiconductor substrate in accordance with the patterned underlayer film. A manufacturing method of a semiconductor device including a process. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10364221-B2 |
| priorityDate | 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 466.