http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2012053600-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-26 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-20 |
| filingDate | 2011-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2012053600-A1 |
| titleOfInvention | Silicon-containing resist underlayer film forming composition having fluorine-based additive |
| abstract | The present invention provides a resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask capable of improving coating performance and pattern shape. Monomer A having two or more radical polymerizable double bonds in the molecule as component (I), and monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule; , An organic group having a silicon atom in the molecule and a monomer D having at least one radical polymerizable double bond, 5 mol% or more based on the total moles of the monomer A, the monomer B and the monomer D Fluorine-containing highly branched polymer obtained by polymerizing in the presence of 200 mol% or less of polymerization initiator C, and (II) hydrolyzable silane compound, hydrolyzate thereof, hydrolyzate condensate thereof, or those A resist underlayer film forming composition for lithography comprising a silicon-containing compound which is a combination of the above. [Selection] Figure 1 |
| priorityDate | 2010-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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