| abstract |
Providing epitaxial wafers, light-receiving elements, etc. that can be efficiently manufactured while containing a layer containing antimony, reduce convex surface defects that reduce yield, and prevent the introduction of impurities that cause performance degradation To do. This manufacturing method includes a step of growing a layer containing antimony (Sb) on the substrate 1 by using a metal organic chemical vapor deposition method, and a layer containing antimony including the window layer 5 on the layer containing antimony. And a step of growing a layer that does not include the layer, and the growth is performed at a growth temperature of 425 ° C. or more and 525 ° C. or less from the growth of the layer containing antimony to the end of the growth of the window layer. |