| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3284 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2012014885-A1 |
| titleOfInvention |
Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing the same, and semiconductor device |
| abstract |
A precursor composition for forming an amorphous metal oxide semiconductor layer containing a metal salt, a primary amide and a solvent mainly composed of water is used, and an amorphous metal oxide semiconductor layer is prepared using the precursor composition. |
| priorityDate |
2010-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |