http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011158718-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
filingDate | 2011-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2011158718-A1 |
titleOfInvention | Polishing liquid for semiconductor substrate and method for manufacturing semiconductor wafer |
abstract | The polishing liquid for a semiconductor substrate according to the present invention includes a modified silica particle whose surface is modified with aluminate, a water-soluble polymer, and water, and the content of the water-soluble polymer is determined by polishing the semiconductor substrate. It exceeds 0 mass% and is 1.00 mass% or less on the basis of the total mass of the liquid, and the pH is 5.0 or more and 9.0 or less. The method for producing a semiconductor wafer of the present invention includes a polishing step of polishing a surface of a semiconductor substrate using the above-described polishing liquid for a semiconductor substrate to obtain a semiconductor wafer. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014069260-A |
priorityDate | 2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.