http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011114380-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25F3-04 |
| filingDate | 2010-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2011114380-A1 |
| titleOfInvention | Method for producing aluminum electrode plate for electrolytic capacitor |
| abstract | In providing a method of manufacturing an aluminum electrode plate for an electrolytic capacitor that can easily manufacture an electrode plate for an aluminum electrolytic capacitor having a thick etching layer and a high capacitance per projected unit area, an electrode (20) disposed in an etching solution is provided. An aluminum plate (10) is arranged between the electrodes, and an alternating current is supplied while flowing an etching solution at a flow rate in the range of 0.002 to 0.015 m / s in an etching chamber (35) partitioned by the electrode (20) and the aluminum plate (10). Etching is performed to form an etching layer having a depth of 70 μm or more on one side. This flow rate is calculated by v (flow rate) = Q ÷ S, where S is the cross-sectional area of the etching chamber (35) and Q is the amount of etching solution supplied to the etching chamber (35) per unit time. Value. |
| priorityDate | 2010-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.