| abstract |
Provided are a semiconductor device (100) having a high heat radiation effect and high withstand voltage, and a method for manufacturing the same. The semiconductor device (100) includes a sealed container (7), a stem (2) connected to the sealed container (7) via a stem outer peripheral part (6), and a stem (2) on the sealed container (7) side. A semiconductor chip (1) mounted on the upper surface, and the semiconductor chip (1) is electrically connected to a lead (3) installed on the stem (2). The stem outer part (6) is made of the same material as the closed container (7), and the stem (2) is made of the same material. The stem outer part (6) and the closed container (7) are connected by welding. The inside of the sealed container (7) is filled with a working fluid containing at least one of ethanol, perfluorocarbon, and fluoroether. |