http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011092994-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
filingDate | 2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2011092994-A1 |
titleOfInvention | Semiconductor light emitting device manufacturing method, semiconductor light emitting device, and photosensitive composition used in semiconductor light emitting device manufacturing method |
abstract | The present invention relates to a method for manufacturing a semiconductor light emitting device having a current blocking layer, and a semiconductor light emitting device capable of forming current blocking layers of various shapes on various positions and layers without using a process such as etching. It aims at providing the photosensitive composition used for the manufacturing method of this, the semiconductor light-emitting device obtained by the manufacturing method of the said semiconductor light-emitting device, and the manufacturing method of the said semiconductor light-emitting device. The present invention is characterized in that, in a method for producing a semiconductor light emitting device having a current blocking layer, a pattern obtained from a photosensitive composition is formed by a lithography method, and the pattern is used as a current blocking layer. |
priorityDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 125.