http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011040484-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2011040484-A1 |
| titleOfInvention | Silicon etchant and etching method |
| abstract | Suppressing the decrease in Si etching rate caused by the presence of Cu, which is characteristic of etching solutions containing hydroxylamine, in silicon etching processing, especially silicon anisotropic etching processing in the manufacturing process of semiconductors and MEMS parts Thus, an etching solution and an etching method that exhibit a high etching rate are provided. An alkaline aqueous solution containing an alkaline hydroxide, hydroxylamine, and thioureas, characterized by anisotropically dissolving single crystal silicon, and a silicon etching method using the etching solution is there. |
| priorityDate | 2009-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.