| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B38-00 |
| filingDate |
2010-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2011016297-A1 |
| titleOfInvention |
Vapor deposition tablet and manufacturing method thereof |
| abstract |
The tablet for vapor deposition of the present invention is characterized in that the proportion of the crystal grains of the grain size constituting the maximum peak in the grain size distribution of the crystal grains appearing on the fracture surface of the indium oxide sintered body is 20% or less. The tablet for use is a first step in which indium oxide powder and cerium oxide powder are mixed and heat-treated at 1300 ° C. or higher and 1550 ° C. or lower to obtain a calcined powder; Alternatively, the cerium oxide powder is mixed and granulated so that the ratio of the calcined powder is 50% by mass or more and 80% by mass or less, and a granulated powder is obtained, and the obtained granulated powder is molded. An oxide containing cerium as a dopant by sintering the molded body at a temperature of 1100 ° C. or higher and 1350 ° C. or lower and 200 ° C. or lower than the heat treatment temperature of the calcined powder in the first step. It is produced by a method comprising the third step to obtain a sintered body of indium. |
| priorityDate |
2009-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |