http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011016196-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 |
| filingDate | 2010-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2011016196-A1 |
| titleOfInvention | Manufacturing method of semiconductor memory |
| abstract | Provided is a method for manufacturing a semiconductor memory device in which power consumption is reduced and variation in element characteristics is suppressed. In the method of manufacturing a semiconductor memory, an insulating formation process is performed on the exposed side surfaces of the reactive conductive material (504) and the non-reactive conductive material (505) stacked above the substrate (500), and the reactive conductive material is formed. By changing the reactive conductive material (504) having a predetermined length from the side surface of the material (504) to the insulator (801), the side surface of the non-reactive conductive material (505) is changed to that of the reactive conductive material (504). A step of forming protrusions (804) by projecting from the side surface, the insulator formation process is an oxidation process or a nitridation process, and the reactive conductive material (504) undergoes a chemical reaction by an oxidation process or a nitridation process. The non-reactive conductive material (505) is a material that is raised and changed into an insulator (801), and the non-reactive conductive material (505) is a material that does not change into an insulator (801) by oxidation treatment or nitridation treatment. |
| priorityDate | 2009-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.