| abstract |
As a surface electrode of a semiconductor device, a first layer that is a barrier metal layer, a second layer that is an Al layer, an Al—Si layer, an Al—Cu layer, or an Al—Si—Cu layer in order from the surface side of the semiconductor substrate. A third layer and a fourth layer which is a solder joint layer are laminated. The fourth layer can be formed by electroless plating after performing the Zn substitution treatment on the third layer. This surface electrode can ensure the flatness of the surface of the third layer while ensuring an ohmic junction between the semiconductor substrate and the surface electrode. Further, when a Zn substitution treatment is performed on the third layer, a Zn substitution film having excellent adhesion and denseness can be formed. As a result, the fourth layer becomes a film having good flatness. |