http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2010140411-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50
filingDate 2010-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2010140411-A1
titleOfInvention LIGHT EMITTING DEVICE MANUFACTURING METHOD AND LIGHT EMITTING DEVICE
abstract The present invention provides an LED chip 1, a phosphor layer 3 that absorbs light emitted from the LED chip 1, emits light after wavelength conversion, and a surface of the phosphor layer 3 so as to cover the phosphor layer 3. In the manufacturing method of the light-emitting device 100 provided with the at least 1 layer of inorganic layer 8, the light of the LED chip of the substrate 2 provided separately from the light emitting surface of the LED chip 1 or the LED chip. Phosphor particles collide against the surface 2a facing the emission surface and are deposited to form the phosphor layer 3, and then at least 1 so that the surface of the phosphor layer 3 is covered with the phosphor layer. The present invention relates to a method for manufacturing a light-emitting device, characterized by providing an inorganic layer, and a light-emitting device, even if the collision speed of the phosphor particles to the surface on which the phosphor layer 3 is formed is reduced The adhesion strength of layer 3 can be increased and durability is improved. Is, time degradation is small, moreover, to provide a method of manufacturing a light emitting device and a light-emitting device of high luminance prevent a decrease in luminous efficiency.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105470368-A
priorityDate 2009-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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