| abstract |
The photoexcited semiconductor of the present invention is a perovskite-type oxide semiconductor having a general formula: BaZr 1-x M x O 3-α (wherein M is at least one element selected from trivalent elements). X is a numerical value greater than 0 and less than 0.8, and α is an oxygen deficit amount and a numerical value greater than 0 and less than 1.5). It is cubic, tetragonal or orthorhombic, and 0.41727 nm ≦ a, b, c ≦ 0.42716 nm when the lattice constant of the crystal system is a, b, c (where a ≦ b ≦ c). , A / c ≧ 0.98 is satisfied. |