| abstract |
The present invention provides a layer having a catalytic ability and a barrier function that are excellent in coverage and film formation uniformity with an ultrathin film, and can form a seed layer with a thin and uniform film thickness capable of forming ultrafine wiring. An object of the present invention is to provide a pretreatment technique capable of forming a film, and to provide a substrate including a seed layer formed with a thin and uniform film thickness by electroless plating. The substrate of the present invention has a catalytic ability for electroless plating composed of ruthenium and / or platinum, and a metal element having one or more barrier functions selected from tungsten, molybdenum, and niobium on a base material. An alloy film with a metal element having a composition in which the metal element having the barrier function is 5 atomic% or more and 90 atomic% or less using a chemical vapor deposition (CVD) method, and the film thickness is 0.5 to 5 nm. It is the board | substrate characterized by having formed into a film. |