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filingDate 2010-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2010087227-A1
titleOfInvention High-purity erbium production method, high-purity erbium, sputtering target made of high-purity erbium, and metal gate film mainly composed of high-purity erbium
abstract Production of high-purity erbium characterized in that crude erbium oxide is mixed with reduced metal, heated in vacuum to reduce and distill erbium, and further dissolved in an inert atmosphere to obtain high-purity erbium A high-purity erbium characterized in that the method and the purity excluding rare earth elements and gas components are 4N or more and the oxygen content is 200 wtppm or less. A method for purifying erbium that has a high vapor pressure and is difficult to purify in a molten state of metal, and a sputtering target composed of high-purity erbium and high-purity material erbium obtained thereby and for metal gates mainly composed of high-purity material erbium It is an object to provide a technique capable of providing a thin film efficiently and stably.
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