http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2010067395-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2008-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2010067395-A1 |
| titleOfInvention | Semiconductor device manufacturing method and manufacturing apparatus thereof |
| abstract | A first step of exposing the insulating film having a siloxane bond to energy rays or plasma, and a gas containing at least one element selected from the group consisting of hydrogen, carbon, nitrogen, and silicon as a constituent element (provided that N and a second step of exposing said insulating film except the 2 and H 2 O gas), in the second step, the dielectric constant of the insulating film is lowered by exposure of said gas to said insulating layer Thereafter, the exposure is terminated before the time when the relative dielectric constant of the insulating film first increases. |
| priorityDate | 2008-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.