http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2010024093-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2009-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2010024093-A1 |
| titleOfInvention | Residue removing liquid after semiconductor dry process and residue removing method using the same |
| abstract | The present invention has less damage to the low-k film than before, suppresses the corrosion of Cu, and leaves the thin film formed by being damaged by the dry process existing on the Cu surface without being removed. Thus, there is provided a chemical solution that can completely remove a residue after a dry process in a short time without cracking or roughening of the Cu surface. Specifically, it is a residue removal solution after a lye process containing an amine salt of a monocarboxylic acid and / or a polycarboxylate salt that forms a chelate of 7 or more members with copper and water, Or a residue removal solution consisting of (B): (A) (1) Bronsted acid having a pKa at 25 ° C. of 3 or more, (2) amine salt of monocarboxylic acid, and / or (3) polycarboxylic acid forming a 7-membered or higher chelate with copper At least one selected from the group consisting of an ammonium salt, an amine salt and a quaternary ammonium salt, and (4) an aqueous solution comprising water, and the pH of the aqueous solution is pKa or less at 25 ° C. of the monocarboxylic acid, etc. Is, (B) (5) an amine salt of a monocarboxylic acid, and / or (6) an amine salt of a polycarboxylic acid that forms a 7-membered or higher chelate with copper, and (7) an aqueous solution comprising water. The pH of the monocarboxylic acid is pKa at 25 ° C. or higher. |
| priorityDate | 2008-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 225.