http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009041365-A1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-476 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2011-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2009041365-A1 |
titleOfInvention | Organic transistor and manufacturing method thereof |
abstract | In an organic transistor having a low threshold voltage, a pinhole in the gate insulating layer is likely to occur, and it is difficult to close the pinhole under mild conditions. In an organic transistor having at least a gate electrode and a gate insulating layer formed on the gate electrode, The gate insulating layer is bonded to the gate electrode surface through a first covalent bond in a direction substantially perpendicular to the gate electrode surface; and A laminated molecular film composed of a second organic molecular layer bonded to the unreacted end portion of the first organic molecular layer via a second covalent bond; The organic transistor, wherein the second covalent bond forms a hydrogen bond with another second covalent bond adjacent to each other in a plane direction perpendicular to the major axis direction of the stacked molecule The above-mentioned problems are solved by providing |
priorityDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.