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filingDate 2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2009041365-A1
titleOfInvention Organic transistor and manufacturing method thereof
abstract In an organic transistor having a low threshold voltage, a pinhole in the gate insulating layer is likely to occur, and it is difficult to close the pinhole under mild conditions. In an organic transistor having at least a gate electrode and a gate insulating layer formed on the gate electrode, The gate insulating layer is bonded to the gate electrode surface through a first covalent bond in a direction substantially perpendicular to the gate electrode surface; and A laminated molecular film composed of a second organic molecular layer bonded to the unreacted end portion of the first organic molecular layer via a second covalent bond; The organic transistor, wherein the second covalent bond forms a hydrogen bond with another second covalent bond adjacent to each other in a plane direction perpendicular to the major axis direction of the stacked molecule The above-mentioned problems are solved by providing
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