http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009011407-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2008-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2009011407-A1 |
| titleOfInvention | Method for producing group III nitride single crystal |
| abstract | A base film 2 made of group III nitride is formed on the substrate 1 by vapor phase growth. By subjecting the substrate 1 and the base film 2 to heat treatment in the presence of hydrogen, the base film 2 is removed and the surface of the substrate 1 is roughened. A seed crystal film 4 made of a group III nitride single crystal is formed on the surface of the substrate 1A by a vapor phase growth method. Group III nitride single crystal 5 is grown on seed crystal film 4 by a flux method. |
| priorityDate | 2007-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.