http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009008446-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-21 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2008-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2009008446-A1 |
| titleOfInvention | Resist underlayer film forming composition and resist pattern forming method using the same |
| abstract | 【Task】 It is intended to obtain a composition for forming a resist underlayer film having a high dry etching rate selection ratio and a desired k-value and refractive index n at a short wavelength such as an ArF excimer laser (wavelength 193 nm). Objective. [Solution] A resist underlayer film forming composition for lithography comprising a polymer and a solvent, wherein the main chain of the polymer has a cinnamic acid derivative. The cinnamic acid derivative is introduced into the main chain of the polymer via an ester bond or an ester bond and an ether bond. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10437150-B2 |
| priorityDate | 2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 117.