| abstract |
Sputtering target or ion plating tablet capable of realizing high-speed film formation and nodule-free, oxide sintered compact optimal for obtaining it, and its manufacturing method, and low resistance with little blue light absorption obtained using it A transparent conductive film is provided. In an oxide sintered body containing indium and gallium as oxides, an In 2 O 3 phase having a bixbyite structure becomes a main crystal phase, and a GaInO 3 phase having a β-Ga 2 O 3 type structure, or GaInO The three phases and the (Ga, In) 2 O 3 phase are finely dispersed as crystal grains having an average grain size of 5 μm or less, and the gallium content is 10 atomic% or more and 35 atomic% in terms of the Ga / (In + Ga) atomic ratio. Provided by an oxide sintered body or the like characterized by being less than |