abstract |
The present invention provides a connection structure for a flip chip semiconductor package in which cracks and peeling are suppressed or reduced to increase reliability, and a design flexibility of a circuit board inner layer circuit is improved to reduce inductance. The present invention relates to a circuit board having a core layer and a buildup layer, a semiconductor element connected to the circuit board via metal bumps, and a sealing resin sealed between the semiconductor element and the circuit board A flip-chip semiconductor package connection structure comprising a composition, wherein a cured product of the sealing resin composition has a glass transition temperature of 80 to 150 ° C. and a linear expansion coefficient from room temperature to the glass transition temperature of 15 to At 35 ppm / ° C., the glass transition temperature of the cured product of the build-up layer is 170 or more, the linear expansion coefficient in the plane direction below the glass transition temperature is 40 ppm / ° C. or less, and the build-up layer on at least one side of the core layer This is a connection structure for a flip chip semiconductor package having stacked vias. |