| abstract |
Providing a tin oxide target suitable for forming a transparent conductive film by a DC sputtering method, a DC pulse sputtering method, and an AC sputtering method. A sputtering target used when forming a transparent conductive film using a sputtering method, comprising at least tin oxide as a main component and selected from an A dopant group consisting of zinc, niobium, titanium, magnesium, aluminum and zirconium A sputtering target comprising: one element; and at least one element selected from a B dopant group consisting of tungsten, tantalum, and molybdenum. |