| abstract |
An organic transistor capable of reducing leakage current from a gate electrode is provided. A substrate, a pair of a source electrode and a drain electrode, an organic semiconductor layer provided between the source electrode and the drain electrode, and a gate electrode provided on the organic semiconductor layer via a gate insulating layer. 2, wherein the gate insulating layer 3 has a laminated structure including at least an organic insulating layer 3 a and an inorganic barrier layer 3 b. [Selection] Figure 1 |